Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SIR112DP-T1-RE3 |
| File Size | 384.89 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIR112DP-T1-RE3 |
| Description | MOSFET N-CHAN 40V |
SIR112DP-T1-RE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SIR112DP-T1-RE3 | Vishay Siliconix | MOSFET N-CHAN 40V | 172 More on Order |
URL Link
www.zouser.com/datasheet/SIR112DP-T1-RE3
|
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 37.6A (Ta), 133A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.96mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 4270pF @ 20V FET Feature - Power Dissipation (Max) 5W (Ta), 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |