Datasheet | SIR692DP-T1-RE3 |
File Size | 206.14 KB |
Total Pages | 7 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SIR692DP-T1-RE3 |
Description | MOSFET N-CH 250V 24.2A SO-8 |
SIR692DP-T1-RE3 - Vishay Siliconix
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SIR692DP-T1-RE3 | Vishay Siliconix | MOSFET N-CH 250V 24.2A SO-8 | 16582 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series ThunderFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 24.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 63mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 7.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1405pF @ 125V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |