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| Datasheet | SIRA60DP-T1-RE3 |
| File Size | 409.73 KB |
| Total Pages | 13 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIRA60DP-T1-RE3, SIRA60DP-T1-GE3 |
| Description | MOSFET N-CH 30V 100A POWERPAKSO, MOSFET N-CH 30V 100A POWERPAKSO |
SIRA60DP-T1-RE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.94mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 7650pF @ 15V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.94mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 7650pF @ 15V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |