Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SISS72DN-T1-GE3 |
| File Size | 251.92 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SISS72DN-T1-GE3 |
| Description | MOSFET N-CH 150V |
SISS72DN-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SISS72DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 150V | 147 More on Order |
URL Link
www.zouser.com/datasheet/SISS72DN-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 25.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 42mOhm @ 7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 75V FET Feature - Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S |