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SIZ350DT-T1-GE3 Datasheet

SIZ350DT-T1-GE3 Cover
DatasheetSIZ350DT-T1-GE3
File Size316.49 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIZ350DT-T1-GE3
Description MOSFET DUAL N-CHAN 30V POWERPAIR

SIZ350DT-T1-GE3 - Vishay Siliconix

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URL Link

SIZ350DT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18.5A (Ta), 30A (Tc)

Rds On (Max) @ Id, Vgs

6.75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

940pF @ 15V

Power - Max

3.7W (Ta), 16.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-Power33 (3x3)