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| Datasheet | SIZ998DT-T1-GE3 |
| File Size | 238.2 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIZ998DT-T1-GE3 |
| Description | MOSFET 2 N-CH 30V 8-POWERPAIR |
SIZ998DT-T1-GE3 - Vishay Siliconix
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SIZ998DT-T1-GE3 | Vishay Siliconix | MOSFET 2 N-CH 30V 8-POWERPAIR | 9999 More on Order |
URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual), Schottky FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V, 19.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 930pF @ 15V, 2620pF @ 15V Power - Max 20.2W, 32.9W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® |