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| Datasheet | SIZF916DT-T1-GE3 |
| File Size | 264.46 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIZF916DT-T1-GE3 |
| Description | MOSFET N-CH DUAL 30V |
SIZF916DT-T1-GE3 - Vishay Siliconix
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SIZF916DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V | 4627 More on Order |
URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V, 4320pF @ 15V Power - Max 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (6x5) |