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| Datasheet | SP8M4FU6TB |
| File Size | 105.12 KB |
| Total Pages | 6 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SP8M4FU6TB |
| Description | MOSFET N/P-CH 30V 9A/7A 8SOIC |
SP8M4FU6TB - Rohm Semiconductor
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URL Link
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Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A, 7A Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |