Datasheet | SQ4946AEY-T1_GE3 |
File Size | 227.88 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | SQ4946AEY-T1_GE3 |
Description | MOSFET 2N-CH 60V 7A |
SQ4946AEY-T1_GE3 - Vishay Siliconix
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SQ4946AEY-T1_GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 7A | 461 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 7A Rds On (Max) @ Id, Vgs 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V Power - Max 4W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |