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| Datasheet | SQJ202EP-T1_GE3 |
| File Size | 356.92 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQJ202EP-T1_GE3 |
| Description | MOSFET 2N-CH 12V 20A/60A PPAK SO |
SQJ202EP-T1_GE3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 20A, 60A Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 975pF @ 6V Power - Max 27W, 48W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual Asymmetric |