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| Datasheet | SQJ262EP-T1_GE3 |
| File Size | 382.4 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQJ262EP-T1_GE3 |
| Description | MOSFET 2 N-CH 60V POWERPAK SO8 |
SQJ262EP-T1_GE3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 15A (Tc), 40A (Tc) Rds On (Max) @ Id, Vgs 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V, 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V, 1260pF @ 25V Power - Max 27W (Tc), 48W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual Asymmetric |