Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SQM200N04-1M1L_GE3 |
| File Size | 138.57 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SQM200N04-1M1L_GE3 |
| Description | MOSFET N-CH 40V 200A TO-263 |
SQM200N04-1M1L_GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SQM200N04-1M1L_GE3 | Vishay Siliconix | MOSFET N-CH 40V 200A TO-263 | 509 More on Order |
URL Link
www.zouser.com/datasheet/SQM200N04-1M1L_GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 413nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20655pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |