Semiconductors
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| Datasheet | SSN1N45BBU |
| File Size | 641.86 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SSN1N45BBU, SSN1N45BTA |
| Description | MOSFET N-CH 450V 500MA TO-92, MOSFET N-CH 450V 500MA TO-92 |
SSN1N45BBU - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.25Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±50V Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.25Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±50V Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |