Datasheet | STB140NF75T4 |
File Size | 517.36 KB |
Total Pages | 18 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | STB140NF75T4, STP140NF75 |
Description | MOSFET N-CH 75V 120A D2PAK, MOSFET N-CH 75V 120A TO-220 |
STB140NF75T4 - STMicroelectronics
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STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 218nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 218nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |