Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STB200NF04L |
| File Size | 354.86 KB |
| Total Pages | 12 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | STB200NF04L, STB200NF04L-1, STP200NF04L |
| Description | MOSFET N-CH 40V 120A D2PAK, MOSFET N-CH 40V 120A I2PAK, MOSFET N-CH 40V 120A TO-220 |
STB200NF04L - STMicroelectronics
The Products You May Be Interested In
 |
STB200NF04L | STMicroelectronics | MOSFET N-CH 40V 120A D2PAK | 590 More on Order |
 |
STB200NF04L-1 | STMicroelectronics | MOSFET N-CH 40V 120A I2PAK | 475 More on Order |
 |
STP200NF04L | STMicroelectronics | MOSFET N-CH 40V 120A TO-220 | 412 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |