Datasheet | STB60NF10T4 |
File Size | 359.29 KB |
Total Pages | 15 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STB60NF10T4, STB60NF10-1, STP60NF10 |
Description | MOSFET N-CH 100V 80A D2PAK, MOSFET N-CH 100V 80A I2PAK, MOSFET N-CH 100V 80A TO-220 |
STB60NF10T4 - STMicroelectronics
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STB60NF10-1 | STMicroelectronics | MOSFET N-CH 100V 80A I2PAK | 1528 More on Order |
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STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4270pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4270pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4270pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |