Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STD10PF06T4 |
| File Size | 293.9 KB |
| Total Pages | 9 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STD10PF06T4, STD10PF06-1 |
| Description | MOSFET P-CH 60V 10A DPAK, MOSFET P-CH 60V 10A IPAK |
STD10PF06T4 - STMicroelectronics
The Products You May Be Interested In
 |
STD10PF06T4 | STMicroelectronics | MOSFET P-CH 60V 10A DPAK | 160 More on Order |
 |
STD10PF06-1 | STMicroelectronics | MOSFET P-CH 60V 10A IPAK | 1333 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series STripFET™ II FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 200mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series STripFET™ II FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 200mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |