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STD11N60M2-EP Datasheet

STD11N60M2-EP Cover
DatasheetSTD11N60M2-EP
File Size369.46 KB
Total Pages17
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STD11N60M2-EP
Description N-CHANNEL 600 V, 0.550 OHM TYP.,

STD11N60M2-EP - STMicroelectronics

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STD11N60M2-EP STD11N60M2-EP STMicroelectronics N-CHANNEL 600 V, 0.550 OHM TYP., 8999

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URL Link

STD11N60M2-EP

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2-EP

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

595mOhm @ 3.75A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.4nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 100V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63