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STD3NM60N Datasheet

STD3NM60N Cover
DatasheetSTD3NM60N
File Size903.43 KB
Total Pages15
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STD3NM60N
Description MOSFET N-CH 600V 3.3A DPAK

STD3NM60N - STMicroelectronics

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URL Link

STD3NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 1.65A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

188pF @ 50V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63