Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STF30NM60ND |
| File Size | 798.58 KB |
| Total Pages | 18 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | STF30NM60ND, STB30NM60ND, STW30NM60ND, STP30NM60ND |
| Description | MOSFET N-CH 600V 25A TO-220FP, MOSFET N-CH 600V 25A D2PAK, MOSFET N-CH 600V 25A TO-247, MOSFET N-CH 600V 25A TO-220 |
STF30NM60ND - STMicroelectronics
The Products You May Be Interested In
 |
STF30NM60ND | STMicroelectronics | MOSFET N-CH 600V 25A TO-220FP | 475 More on Order |
 |
STB30NM60ND | STMicroelectronics | MOSFET N-CH 600V 25A D2PAK | 534 More on Order |
 |
STW30NM60ND | STMicroelectronics | MOSFET N-CH 600V 25A TO-247 | 537 More on Order |
 |
STP30NM60ND | STMicroelectronics | MOSFET N-CH 600V 25A TO-220 | 394 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series FDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 50V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series FDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series FDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series FDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |