Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STFW45N65M5 |
| File Size | 1,268.71 KB |
| Total Pages | 18 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | STFW45N65M5, STWA45N65M5, STW45N65M5 |
| Description | MOSFET N-CH 650V 35A TO-3PF, MOSFET N-CH 650V 35A TO247, MOSFET N-CH 650V 35A TO247 |
STFW45N65M5 - STMicroelectronics
The Products You May Be Interested In
 |
STFW45N65M5 | STMicroelectronics | MOSFET N-CH 650V 35A TO-3PF | 182 More on Order |
 |
STWA45N65M5 | STMicroelectronics | MOSFET N-CH 650V 35A TO247 | 774 More on Order |
 |
STW45N65M5 | STMicroelectronics | MOSFET N-CH 650V 35A TO247 | 2901 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 78mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3470pF @ 100V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOWATT-218FX Package / Case ISOWATT218FX |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 78mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3470pF @ 100V FET Feature - Power Dissipation (Max) 210W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 78mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3375pF @ 100V FET Feature - Power Dissipation (Max) 210W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |