Semiconductors
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Optoelectronics
| Datasheet | STGB10NB60ST4 |
| File Size | 603.56 KB |
| Total Pages | 19 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STGB10NB60ST4, STGP10NB60S |
| Description | IGBT 600V 29A 80W D2PAK, IGBT 600V 29A 80W TO220 |
STGB10NB60ST4 - STMicroelectronics
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URL Link
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Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 29A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A Power - Max 80W Switching Energy 600µJ (on), 5mJ (off) Input Type Standard Gate Charge 33nC Td (on/off) @ 25°C 700ns/1.2µs Test Condition 480V, 10A, 1kOhm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D²PAK |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 29A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A Power - Max 80W Switching Energy 600µJ (on), 5mJ (off) Input Type Standard Gate Charge 33nC Td (on/off) @ 25°C 700ns/1.2µs Test Condition 480V, 10A, 1kOhm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |