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STGB4M65DF2 Datasheet

STGB4M65DF2 Cover
DatasheetSTGB4M65DF2
File Size1,161.76 KB
Total Pages18
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STGB4M65DF2
Description TRENCH GATE FIELD-STOP IGBT, M S

STGB4M65DF2 - STMicroelectronics

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STGB4M65DF2 STGB4M65DF2 STMicroelectronics TRENCH GATE FIELD-STOP IGBT, M S 328

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URL Link

STGB4M65DF2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

M

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

16A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

68W

Switching Energy

40µJ (on), 136µJ (off)

Input Type

Standard

Gate Charge

15.2nC

Td (on/off) @ 25°C

12ns/86ns

Test Condition

400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr)

133ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK