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STGYA120M65DF2 Datasheet

STGYA120M65DF2 Cover
DatasheetSTGYA120M65DF2
File Size987.19 KB
Total Pages17
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STGYA120M65DF2
Description TRENCH GATE FIELD-STOP IGBT, M S

STGYA120M65DF2 - STMicroelectronics

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STGYA120M65DF2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

IGBT Type

NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 120A

Power - Max

625W

Switching Energy

1.8mJ (on), 4.41mJ (off)

Input Type

Standard

Gate Charge

420nC

Td (on/off) @ 25°C

66ns/185ns

Test Condition

400V, 120A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

202ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Exposed Pad

Supplier Device Package

MAX247™