Datasheet | STH270N8F7-2 |
File Size | 1,654.67 KB |
Total Pages | 22 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STH270N8F7-2, STP270N8F7, STH270N8F7-6 |
Description | MOSFET N-CH 80V 180A H2PAK-2, MOSFET N CH 80V 180A TO220, MOSFET N-CH 80V 180A H2PAK-6 |
STH270N8F7-2 - STMicroelectronics
The Products You May Be Interested In
STH270N8F7-2 | STMicroelectronics | MOSFET N-CH 80V 180A H2PAK-2 | 282 More on Order |
|
STP270N8F7 | STMicroelectronics | MOSFET N CH 80V 180A TO220 | 431 More on Order |
|
STH270N8F7-6 | STMicroelectronics | MOSFET N-CH 80V 180A H2PAK-6 | 412 More on Order |
URL Link
STMicroelectronics Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab) Variant |
STMicroelectronics Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
STMicroelectronics Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H²PAK Package / Case TO-263-7, D²Pak (6 Leads + Tab) |