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STL18N60M2 Datasheet

STL18N60M2 Cover
DatasheetSTL18N60M2
File Size900.88 KB
Total Pages15
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STL18N60M2
Description MOSFET N-CH 600V 9A POWERFLAT

STL18N60M2 - STMicroelectronics

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URL Link

STL18N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

308mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

791pF @ 100V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6) HV

Package / Case

8-PowerVDFN