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STL18NM60N Datasheet

STL18NM60N Cover
DatasheetSTL18NM60N
File Size938.51 KB
Total Pages16
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STL18NM60N
Description MOSFET N-CH 600V 6A POWERFLAT

STL18NM60N - STMicroelectronics

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URL Link

STL18NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.1A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

310mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 50V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (8x8) HV

Package / Case

8-PowerVDFN