Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STP11N65M5 |
| File Size | 1,017.69 KB |
| Total Pages | 30 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | STP11N65M5, STD11N65M5, STF11N65M5, STB11N65M5 |
| Description | MOSFET N CH 650V 9A TO-220, MOSFET N CH 650V 9A DPAK, MOSFET N CH 650V 9A TO-220FP, MOSFET N CH 650V 9A D2PAK |
STP11N65M5 - STMicroelectronics
The Products You May Be Interested In
 |
STP11N65M5 | STMicroelectronics | MOSFET N CH 650V 9A TO-220 | 399 More on Order |
 |
STD11N65M5 | STMicroelectronics | MOSFET N CH 650V 9A DPAK | 562 More on Order |
 |
STF11N65M5 | STMicroelectronics | MOSFET N CH 650V 9A TO-220FP | 585 More on Order |
 |
STB11N65M5 | STMicroelectronics | MOSFET N CH 650V 9A D2PAK | 540 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 644pF @ 100V FET Feature - Power Dissipation (Max) 85W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 100V FET Feature - Power Dissipation (Max) 85W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 644pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 644pF @ 100V FET Feature - Power Dissipation (Max) 85W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |