Semiconductors
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| Datasheet | STP16NS25FP |
| File Size | 344.19 KB |
| Total Pages | 9 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STP16NS25FP, STP16NS25 |
| Description | MOSFET N-CH 250V 16A TO-220FP, MOSFET N-CH 250V 16A TO-220 |
STP16NS25FP - STMicroelectronics
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Manufacturer STMicroelectronics Series MESH OVERLAY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MESH OVERLAY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |