Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STP3N80K5 |
| File Size | 1,133.36 KB |
| Total Pages | 24 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | STP3N80K5, STU3N80K5, STF3N80K5, STU3LN80K5, STD3N80K5 |
| Description | MOSFET N-CH 800V 2.5A TO220, MOSFET N-CH 800V 2.5A IPAK, MOSFET N-CH 800V 2.5A TO220FP, MOSFET N-CHANNEL 800V 2A IPAK, MOSFET N-CH 800V 2.5A DPAK |
STP3N80K5 - STMicroelectronics
The Products You May Be Interested In
 |
STP3N80K5 | STMicroelectronics | MOSFET N-CH 800V 2.5A TO220 | 1577 More on Order |
 |
STU3N80K5 | STMicroelectronics | MOSFET N-CH 800V 2.5A IPAK | 526 More on Order |
 |
STF3N80K5 | STMicroelectronics | MOSFET N-CH 800V 2.5A TO220FP | 5448 More on Order |
 |
STU3LN80K5 | STMicroelectronics | MOSFET N-CHANNEL 800V 2A IPAK | 4704 More on Order |
 |
STD3N80K5 | STMicroelectronics | MOSFET N-CH 800V 2.5A DPAK | 4062 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 130pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 130pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 130pF @ 100V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer STMicroelectronics Series MDmesh™ K5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.25Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 2.63nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 102pF @ 100V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 130pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |