Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STP40N65M2 |
| File Size | 440.27 KB |
| Total Pages | 14 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STP40N65M2, STI40N65M2 |
| Description | MOSFET N-CH 650V 32A TO220, MOSFET N-CH 650V 32A I2PAK |
STP40N65M2 - STMicroelectronics
The Products You May Be Interested In
 |
STP40N65M2 | STMicroelectronics | MOSFET N-CH 650V 32A TO220 | 1894 More on Order |
 |
STI40N65M2 | STMicroelectronics | MOSFET N-CH 650V 32A I2PAK | 1792 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2355pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2355pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |