Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STP9NK65Z |
| File Size | 425.09 KB |
| Total Pages | 16 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STP9NK65Z, STP9NK65ZFP |
| Description | MOSFET N-CH 650V 6.4A TO-220, MOSFET N-CH 650V 6.4A TO-220FP |
STP9NK65Z - STMicroelectronics
The Products You May Be Interested In
 |
STP9NK65Z | STMicroelectronics | MOSFET N-CH 650V 6.4A TO-220 | 208 More on Order |
 |
STP9NK65ZFP | STMicroelectronics | MOSFET N-CH 650V 6.4A TO-220FP | 620 More on Order |
URL Link
|
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1145pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1145pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |