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STPSC10H065DI Datasheet

STPSC10H065DI Cover
DatasheetSTPSC10H065DI
File Size732.41 KB
Total Pages14
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts STPSC10H065DI, STPSC10H065D, STPSC10H065B-TR, STPSC10H065G-TR
Description DIODE SCHOTTKY 650V 10A TO220AC, DIODE SCHOTTKY 650V 10A TO220AC, DIODE SCHOTTKY 650V 10A DPAK, DIODE SILICON 650V 10A D2PAK

STPSC10H065DI - STMicroelectronics

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STPSC10H065DI STPSC10H065DI STMicroelectronics DIODE SCHOTTKY 650V 10A TO220AC 304

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STPSC10H065D STPSC10H065D STMicroelectronics DIODE SCHOTTKY 650V 10A TO220AC 171

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STPSC10H065B-TR STPSC10H065B-TR STMicroelectronics DIODE SCHOTTKY 650V 10A DPAK 293

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STPSC10H065G-TR STPSC10H065G-TR STMicroelectronics DIODE SILICON 650V 10A D2PAK 243

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STPSC10H065DI

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

100µA @ 650V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Insulated, TO-220AC

Supplier Device Package

TO-220AC ins

Operating Temperature - Junction

-40°C ~ 175°C

STPSC10H065D

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 650V

Capacitance @ Vr, F

480pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 175°C

STPSC10H065B-TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 650V

Capacitance @ Vr, F

480pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Operating Temperature - Junction

-40°C ~ 175°C

STPSC10H065G-TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 650V

Capacitance @ Vr, F

480pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D²PAK

Operating Temperature - Junction

-40°C ~ 175°C