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STPSC8H065DI Datasheet

STPSC8H065DI Cover
DatasheetSTPSC8H065DI
File Size214.79 KB
Total Pages14
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts STPSC8H065DI, STPSC8H065D, STPSC8H065G-TR, STPSC8H065B-TR
Description DIODE SCHOTTKY 650V 8A TO220AC, DIODE SCHOTTKY 650V 8A TO220AC, DIODE SCHOTTKY 650V 8A D2PAK, DIODE SCHOTTKY 650V 8A DPAK

STPSC8H065DI - STMicroelectronics

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STPSC8H065D STPSC8H065D STMicroelectronics DIODE SCHOTTKY 650V 8A TO220AC 365

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STPSC8H065G-TR STPSC8H065G-TR STMicroelectronics DIODE SCHOTTKY 650V 8A D2PAK 391

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STPSC8H065B-TR STPSC8H065B-TR STMicroelectronics DIODE SCHOTTKY 650V 8A DPAK 170

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URL Link

STPSC8H065DI

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

80µA @ 650V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Insulated, TO-220AC

Supplier Device Package

TO-220AC ins

Operating Temperature - Junction

-40°C ~ 175°C

STPSC8H065D

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

80µA @ 650V

Capacitance @ Vr, F

414pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 175°C

STPSC8H065G-TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

80µA @ 650V

Capacitance @ Vr, F

414pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D²PAK

Operating Temperature - Junction

-40°C ~ 175°C

STPSC8H065B-TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.75V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

80µA @ 650V

Capacitance @ Vr, F

414pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Operating Temperature - Junction

-40°C ~ 175°C