Datasheet | STW12NK60Z |
File Size | 833.56 KB |
Total Pages | 15 |
Manufacturer | STMicroelectronics |
Website | https://www.st.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | STW12NK60Z, STP12NK60Z, STF12NK60Z |
Description | MOSFET N-CH 600V 10A TO-247, MOSFET N-CH 600V 10A TO220, MOSFET N-CH 600V 10A TO220FP |
STW12NK60Z - STMicroelectronics
The Products You May Be Interested In
STW12NK60Z | STMicroelectronics | MOSFET N-CH 600V 10A TO-247 | 279 More on Order |
|
STP12NK60Z | STMicroelectronics | MOSFET N-CH 600V 10A TO220 | 225 More on Order |
|
STF12NK60Z | STMicroelectronics | MOSFET N-CH 600V 10A TO220FP | 2207 More on Order |
URL Link
STMicroelectronics Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 640mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
STMicroelectronics Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 640mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
STMicroelectronics Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 640mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |