Semiconductors
Passive Components
Sensors
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Optoelectronics
| Datasheet | STW36N55M5 |
| File Size | 759.28 KB |
| Total Pages | 15 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STW36N55M5, STP36N55M5 |
| Description | MOSFET N CH 550V 33A TO-247, MOSFET N CH 550V 33A TO-220 |
STW36N55M5 - STMicroelectronics
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Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 550V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 100V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 550V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 100V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |