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STW55NM60N Datasheet

STW55NM60N Cover
DatasheetSTW55NM60N
File Size330.01 KB
Total Pages12
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STW55NM60N
Description MOSFET N-CH 600V 51A TO-247

STW55NM60N - STMicroelectronics

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URL Link

STW55NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 25.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

5800pF @ 50V

FET Feature

-

Power Dissipation (Max)

350W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3