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| Datasheet | STW58N65DM2AG |
| File Size | 282.05 KB |
| Total Pages | 13 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STW58N65DM2AG |
| Description | MOSFET N-CH 650V 48A |
STW58N65DM2AG - STMicroelectronics
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URL Link
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Manufacturer STMicroelectronics Series Automotive, AEC-Q101, MDmesh™ DM2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 100V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |