Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | STW70N60M2-4 |
| File Size | 1,022.07 KB |
| Total Pages | 13 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STW70N60M2-4, STW70N60M2 |
| Description | POWER MOSFET, MOSFET N-CH 600V 68A TO247 |
STW70N60M2-4 - STMicroelectronics
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Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 34A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 100V FET Feature - Power Dissipation (Max) 450W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 34A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 100V FET Feature - Power Dissipation (Max) 450W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |