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STY112N65M5 Datasheet

STY112N65M5 Cover
DatasheetSTY112N65M5
File Size851.25 KB
Total Pages12
ManufacturerSTMicroelectronics
Websitehttps://www.st.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts STY112N65M5
Description MOSFET N-CH 650V 93A MAX247

STY112N65M5 - STMicroelectronics

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URL Link

STY112N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

96A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

22mOhm @ 47A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

350nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

16870pF @ 100V

FET Feature

-

Power Dissipation (Max)

625W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

MAX247™

Package / Case

TO-247-3