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| Datasheet | SUD50P04-23-GE3 |
| File Size | 93.51 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SUD50P04-23-GE3, SUD50P04-23-E3 |
| Description | MOSFET P-CH 40V 8.2A TO252, MOSFET P-CH 40V 8.2A TO252 |
SUD50P04-23-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 20V FET Feature - Power Dissipation (Max) 3.1W (Ta), 45.4W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 20V FET Feature - Power Dissipation (Max) 3.1W (Ta), 45.4W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |