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SUP36N20-54P-E3 Datasheet

SUP36N20-54P-E3 Cover
DatasheetSUP36N20-54P-E3
File Size85.87 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SUP36N20-54P-E3
Description MOSFET N-CH 200V 36A TO220AB

SUP36N20-54P-E3 - Vishay Siliconix

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URL Link

SUP36N20-54P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Rds On (Max) @ Id, Vgs

53mOhm @ 20A, 15V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

127nC @ 15V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.12W (Ta), 166W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3