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| Datasheet | TJ80S04M3L(T6L1,NQ |
| File Size | 237.39 KB |
| Total Pages | 9 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TJ80S04M3L(T6L1,NQ |
| Description | MOSFET P-CH 40V 80A DPAK-3 |
TJ80S04M3L(T6L1,NQ - Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 40A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 158nC @ 10V Vgs (Max) +10V, -20V Input Capacitance (Ciss) (Max) @ Vds 7770pF @ 10V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK+ Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |