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TLP291(GR-TP Datasheet

TLP291(GR-TP,E) Cover
DatasheetTLP291(GR-TP,E)
File Size313.4 KB
Total Pages13
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 5 part numbers
Associated Parts TLP291(GR-TP,E), TLP291(GR,E), TLP291(E), TLP291(TP,E), TLP291(GB-TP,E)
Description OPTOISOLATOR 3.75KV TRANS 4-SO, OPTOISOLATOR 3.75KV TRANS 4-SO, OPTOISOLATOR 3.75KV TRANS 4-SO, OPTOISOLATOR 3.75KV TRANS 4-SO, OPTOISOLATOR 3.75KV TRANS 4-SO

TLP291(GR-TP,E) - Toshiba Semiconductor and Storage

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URL Link

TLP291(GR-TP,E)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Number of Channels

1

Voltage - Isolation

3750Vrms

Current Transfer Ratio (Min)

100% @ 5mA

Current Transfer Ratio (Max)

300% @ 5mA

Turn On / Turn Off Time (Typ)

7µs, 7µs

Rise / Fall Time (Typ)

4µs, 7µs

Input Type

DC

Output Type

Transistor

Voltage - Output (Max)

80V

Current - Output / Channel

50mA

Voltage - Forward (Vf) (Typ)

1.25V

Current - DC Forward (If) (Max)

50mA

Vce Saturation (Max)

300mV

Operating Temperature

-55°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

4-SOIC (0.179", 4.55mm Width)

Supplier Device Package

4-SO

TLP291(GR,E)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Number of Channels

1

Voltage - Isolation

3750Vrms

Current Transfer Ratio (Min)

100% @ 5mA

Current Transfer Ratio (Max)

300% @ 5mA

Turn On / Turn Off Time (Typ)

7µs, 7µs

Rise / Fall Time (Typ)

4µs, 7µs

Input Type

DC

Output Type

Transistor

Voltage - Output (Max)

80V

Current - Output / Channel

50mA

Voltage - Forward (Vf) (Typ)

1.25V

Current - DC Forward (If) (Max)

50mA

Vce Saturation (Max)

300mV

Operating Temperature

-55°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

4-SOIC (0.179", 4.55mm Width)

Supplier Device Package

4-SO

TLP291(E)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Number of Channels

1

Voltage - Isolation

3750Vrms

Current Transfer Ratio (Min)

50% @ 5mA

Current Transfer Ratio (Max)

400% @ 5mA

Turn On / Turn Off Time (Typ)

7µs, 7µs

Rise / Fall Time (Typ)

4µs, 7µs

Input Type

DC

Output Type

Transistor

Voltage - Output (Max)

80V

Current - Output / Channel

50mA

Voltage - Forward (Vf) (Typ)

1.25V

Current - DC Forward (If) (Max)

50mA

Vce Saturation (Max)

300mV

Operating Temperature

-55°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

4-SOIC (0.179", 4.55mm Width)

Supplier Device Package

4-SO

TLP291(TP,E)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Number of Channels

1

Voltage - Isolation

3750Vrms

Current Transfer Ratio (Min)

50% @ 5mA

Current Transfer Ratio (Max)

400% @ 5mA

Turn On / Turn Off Time (Typ)

7µs, 7µs

Rise / Fall Time (Typ)

4µs, 7µs

Input Type

DC

Output Type

Transistor

Voltage - Output (Max)

80V

Current - Output / Channel

50mA

Voltage - Forward (Vf) (Typ)

1.25V

Current - DC Forward (If) (Max)

50mA

Vce Saturation (Max)

300mV

Operating Temperature

-55°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

4-SOIC (0.179", 4.55mm Width)

Supplier Device Package

4-SO

TLP291(GB-TP,E)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Number of Channels

1

Voltage - Isolation

3750Vrms

Current Transfer Ratio (Min)

100% @ 5mA

Current Transfer Ratio (Max)

400% @ 5mA

Turn On / Turn Off Time (Typ)

7µs, 7µs

Rise / Fall Time (Typ)

4µs, 7µs

Input Type

DC

Output Type

Transistor

Voltage - Output (Max)

80V

Current - Output / Channel

50mA

Voltage - Forward (Vf) (Typ)

1.25V

Current - DC Forward (If) (Max)

50mA

Vce Saturation (Max)

300mV

Operating Temperature

-55°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

4-SOIC (0.179", 4.55mm Width)

Supplier Device Package

4-SO