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| Datasheet | TN0200K-T1-E3 |
| File Size | 75.65 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TN0200K-T1-E3 |
| Description | MOSFET N-CH 20V SOT23-3 |
TN0200K-T1-E3 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 1V @ 50µA Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |