Datasheet | US6M11TR |
File Size | 197.92 KB |
Total Pages | 8 |
Manufacturer | Rohm Semiconductor |
Website | https://www.rohm.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | US6M11TR |
Description | MOSFET N/P-CH 20V/12V TUMT6 |
US6M11TR - Rohm Semiconductor
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US6M11TR | Rohm Semiconductor | MOSFET N/P-CH 20V/12V TUMT6 | 554 More on Order |
URL Link
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Rohm Semiconductor Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V, 12V Current - Continuous Drain (Id) @ 25°C 1.5A, 1.3A Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V Power - Max 1W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-SMD, Flat Leads Supplier Device Package TUMT6 |