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VB20120S-E3/8W Datasheet

VB20120S-E3/8W Cover
DatasheetVB20120S-E3/8W
File Size213.45 KB
Total Pages6
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 5 part numbers
Associated Parts VB20120S-E3/8W, VF20120S-E3/4W, VI20120S-E3/4W, VB20120S-E3/4W, V20120S-E3/4W
Description DIODE SCHOTTKY 120V 20A TO263AB, DIODE SCHOTTKY 120V 20A ITO220AB, DIODE SCHOTTKY 120V 20A TO262AA, DIODE SCHOTTKY 120V 20A TO263AB, DIODE SCHOTTKY 120V 20A TO220AB

VB20120S-E3/8W - Vishay Semiconductor Diodes Division

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VB20120S-E3/8W VB20120S-E3/8W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 120V 20A TO263AB 592

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VI20120S-E3/4W VI20120S-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 120V 20A TO262AA 418

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VB20120S-E3/4W VB20120S-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 120V 20A TO263AB 462

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V20120S-E3/4W V20120S-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 120V 20A TO220AB 539

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VB20120S-E3/8W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

120V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.12V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

300µA @ 120V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-40°C ~ 150°C

VF20120S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

120V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.12V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

300µA @ 120V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack, Isolated Tab

Supplier Device Package

ITO-220AB

Operating Temperature - Junction

-40°C ~ 150°C

VI20120S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

120V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.12V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

300µA @ 120V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262AA

Operating Temperature - Junction

-40°C ~ 150°C

VB20120S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

120V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.12V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

300µA @ 120V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-40°C ~ 150°C

V20120S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

120V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.12V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

300µA @ 120V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Operating Temperature - Junction

-40°C ~ 150°C