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| Datasheet | VB20120SG-M3/4W |
| File Size | 97.11 KB |
| Total Pages | 4 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | VB20120SG-M3/4W, VB20120SG-M3/8W |
| Description | DIODE SCHOTTKY 20A 120V TO-263AB, DIODE SCHOTTKY 20A 120V TO-263AB |
VB20120SG-M3/4W - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 120V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.33V @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 250µA @ 120V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 120V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.33V @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 250µA @ 120V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -55°C ~ 150°C |