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VIT1080S-E3/4W Datasheet

VIT1080S-E3/4W Cover
DatasheetVIT1080S-E3/4W
File Size200.55 KB
Total Pages6
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 5 part numbers
Associated Parts VIT1080S-E3/4W, VT1080S-E3/4W, VBT1080S-E3/8W, VFT1080S-E3/4W, VBT1080S-E3/4W
Description DIODE SCHOTTKY 80V 10A TO262AA, DIODE SCHOTTKY 10A 80V TO-220AB, DIODE SCHOTTKY 10A 80V TO-263AB, DIODE SCHOTTKY 10A 80V ITO-220AB, DIODE SCHOTTKY 10A 80V TO-263AB

VIT1080S-E3/4W - Vishay Semiconductor Diodes Division

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VT1080S-E3/4W VT1080S-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 10A 80V TO-220AB 495

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VBT1080S-E3/8W VBT1080S-E3/8W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 10A 80V TO-263AB 465

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VFT1080S-E3/4W VFT1080S-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 10A 80V ITO-220AB 346

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VBT1080S-E3/4W VBT1080S-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 10A 80V TO-263AB 389

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VIT1080S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

810mV @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

600µA @ 80V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262AA

Operating Temperature - Junction

-55°C ~ 150°C

VT1080S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

810mV @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

600µA @ 80V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Operating Temperature - Junction

-55°C ~ 150°C

VBT1080S-E3/8W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

810mV @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

600µA @ 80V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-55°C ~ 150°C

VFT1080S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

810mV @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

600µA @ 80V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack, Isolated Tab

Supplier Device Package

ITO-220AB

Operating Temperature - Junction

-55°C ~ 150°C

VBT1080S-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

810mV @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

600µA @ 80V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-55°C ~ 150°C