Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VP1008B |
| File Size | 88.83 KB |
| Total Pages | 4 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | VP1008B, VP0808B-E3, VP0808B-2, VP0808B |
| Description | MOSFET P-CH 100V .79A TO-205, MOSFET P-CH 80V 0.88A TO-205, MOSFET P-CH 80V 0.88A TO-205, MOSFET P-CH 80V 0.88A TO-205 |
VP1008B - Vishay Siliconix
The Products You May Be Interested In
 |
VP1008B | Vishay Siliconix | MOSFET P-CH 100V .79A TO-205 | 260 More on Order |
 |
VP0808B-E3 | Vishay Siliconix | MOSFET P-CH 80V 0.88A TO-205 | 508 More on Order |
 |
VP0808B-2 | Vishay Siliconix | MOSFET P-CH 80V 0.88A TO-205 | 545 More on Order |
 |
VP0808B | Vishay Siliconix | MOSFET P-CH 80V 0.88A TO-205 | 305 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 790mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 6.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-39 Package / Case TO-205AD, TO-39-3 Metal Can |
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 6.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-39 Package / Case TO-205AD, TO-39-3 Metal Can |
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 6.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-39 Package / Case TO-205AD, TO-39-3 Metal Can |
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 6.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-39 Package / Case TO-205AD, TO-39-3 Metal Can |